Lithographie améliorée de la couche superieure pour le traitement des semiconducteurs

Improved top layer imaging lithography for semiconductor processing

Verbessertes Deckschicht-Masken-Lithographieverfahren für Halbleiter-Herstellung

Abstract

A method for etching a surface (12) includes the steps of providing an under layer (14) formed on the surface and a top layer (16) formed on the under layer, patterning the top layer to expose portions of the under layer, forming a layer (22) including silicon on the exposed portions of the under layer, removing the top layer to expose the under layer in portions other than the portions of the under layer having the silicon layer thereon and etching the under layer in portions other than the portions of the under layer having the silicon layer thereon to expose the surface.

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Patent Citations (3)

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    US-5741625-AApril 21, 1998Hyundai Electronics Industries Co., Ltd.Process for forming fine patterns in a semiconductor device utilizing multiple photosensitive film patterns and organic metal-coupled material
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NO-Patent Citations (1)

    Title
    MCCOLGIN W C ET AL: "A SILICON-ADDED BILAYER RESIST (SABRE) PROCESS FOR HIGH-RESOLUTION OPTICAL LITHOGRAPHY", SYMPOSIUM ON VLSI TECHNOLOGY,US,NEW YORK, IEEE, vol. SYMP. 7, 18 May 1987 (1987-05-18), pages 9 - 10, XP000010022

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